This document is a technical datasheet for the Toshiba 1SS389, a silicon epitaxial Schottky barrier type diode designed for high-speed switching applications. The device features a low forward voltage drop of typically 0.28V at 5mA and supports a maximum peak reverse voltage of 15V.
| Reverse Voltage | 10 V |
|---|---|
| Maximum (Peak) Forward Current | 200 mA |
| Average Forward Current | 100 mA |
| Surge Current (10ms) | 1 A |
| Power Dissipation | 150 mW |
| Junction Temperature | 125 °C |
The typical forward voltage (VF) at an IF of 5mA is 0.28V.
The device can be stored between -55°C and 125°C.