This datasheet provides electrical specifications for the Toshiba 1SS187 silicon epitaxial planar diode, including maximum ratings such as reverse voltage (80V), forward current (100mA avg), and reverse recovery time (1.6ns). It also lists capacitance and voltage characteristics at 25°C. The document includes test circuits and graphical data for forward voltage, reverse voltage, and reverse recovery time. Safety and usage guidelines are included for proper application.
| Maximum Reverse Voltage | 80 V |
|---|---|
| Average Forward Current | 100 mA |
| Reverse Recovery Time | 1.6 ns |
| Total Capacitance | 2.2 pF |
| Forward Voltage at 100mA | 0.92 V |
The maximum reverse voltage rating is 80V.
The reverse recovery time is 1.6 nanoseconds.
The forward voltage at 100mA is 0.92V.