2SJ244 is a silicon P-channel MOSFET with very low on-resistance and high-speed switching. It is suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.
This document is a technical datasheet for the Hitachi 2SJ244 Silicon P-Channel MOS FET. It highlights key features such as very low on-resistance and high-speed switching capabilities, making it suitable for applications like camera or VTR motor drive circuits, power switches, and solenoid drives.
The datasheet provides comprehensive electrical specifications including absolute maximum ratings (e.g., Drain to source voltage of -12V), typical operating characteristics at 25°C, and graphical data on power dissipation, capacitance, and switching times under various conditions.
| Drain to source voltage (VDSS) | -12 V |
|---|---|
| Gate to source voltage (VGSS) | -7V |
| Drain current (ID) | -2A |
| Channel dissipation (Pch) | 1W |
| Channel temperature (Tch) | 150 °C |
| Storage temperature (Tstg) | -55 to +150 °C |
This device is suitable for camera or VTR motor drive circuits, power switches, solenoid drives, and other high speed power switching applications.
The maximum channel temperature (Tch) is 150 °C.
The channel dissipation (Pch) is rated at 1 W when mounted on the specified alumina ceramic board.