2SJ172 is a P-channel MOSFET from Nexperia. It features low on-resistance, high switching speed, low drive current, and is suitable for applications such as motor drive, DC-DC converter, power switch and solenoid drive.
This document is a technical datasheet for the Hitachi 2SJ172, a Silicon P-Channel MOS Field Effect Transistor (MOSFET). It outlines key features such as low on-resistance, high-speed switching capabilities, and suitability for applications including motor drives, DC-DC converters, power switches, and solenoid drives. The device is designed to be driven from a 5V source.
| Drain to source voltage | -60 V |
|---|---|
| Gate to source voltage | +20 V |
| Channel dissipation | 40 W |
| Channel temperature | 150 °C |
| Static drain to source on state resistance (Vgs = -4 V) | 0.25 Ohm |
| Input capacitance | 900 pF |
The absolute maximum rating for the drain current (I_D) is -10 A.
The channel dissipation (P_ch) is rated at a maximum of 40 W when the temperature is 25°C.
The device can be stored between -55°C and +150°C, with a maximum channel temperature of 150°C.
The typical value for the static drain-to-source on-state resistance (R_DS(on)) is 0.13 Ω.