The document introduces the application and features of 2SJ160, 2SJ161, and 2SJ162 silicon P-Channel MOS FETs. These products are low-frequency power amplifier devices that can be used in conjunction with 2SK1056, 2SK1057, and 2SK1058. The features include good frequency characteristics, high-speed switching, wide area of safe operation, enhancement-mode, good complementary characteristics, and equipped with gate protection diodes. Suitable for audio power amplifier.
This document provides technical specifications and electrical characteristics for the Hitachi 2SJ160, 2SJ161, and 2SJ162 series of Silicon P-Channel MOS Field Effect Transistors (FETs). These devices are designed for low-frequency power amplifier applications and can be used as a complementary pair with specific N-channel counterparts. Key features include high-speed switching capabilities, good frequency characteristics, and an enhancement-mode operation structure equipped with gate protection diodes.
| Drain to source voltage (2SJ160) | -120 V |
|---|---|
| Drain to source voltage (2SJ161) | -140 V |
| Drain to source voltage (2SJ162) | -160 V |
| Gate to source voltage | +/- 5 V |
| Drain current | 7 A |
| Channel dissipation | 100 W |
| Package type | TO-3P |
The document states they are suitable for use as a low frequency power amplifier.
The absolute maximum channel temperature is 150 °C.