This document is a technical datasheet for the Toshiba SV309, a silicon epitaxial planar type diode designed for UHF and SHF tuning. Key features include a high capacitance ratio of approximately 5.7 (typical) and low series resistance of 1.2 ohms (typical). The device is suitable for small size tuners due to its excellent C-V characteristics.
| Reverse Voltage (VR) | 30 V |
|---|---|
| Peak Reverse Voltage (VRM) | 1.20 Ohms (Typ.) |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range (Tstg) | -55~125 °C |
| Capacitance Ratio (Coy/Casy) | 5.7 (Typ.) |
The device has a maximum reverse voltage rating of 30 V.
The typical capacitance ratio is 5.7.
The maximum junction temperature is 125 °C.