Toshiba 1SV329 Silicon Epitaxial Planar Diode Datasheet

1SV329 is a VCO produced by TOSHIBA company, which has the characteristics of high capacitance ratio and low series resistance, and is suitable for small size tuner.

Brand: Toshiba
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 4
File format: PDF
File size: 95 KB
Published: 07 June, 2012
Updated: 01 October, 2023
MD5 checksum: B4A56639060A353D1C4EEA267B0C0EBA
PDF: Toshiba 1SV329 Silicon Epitaxial Planar Diode Datasheet PDF

About this manual

This document is a technical datasheet for the Toshiba 1SV329, a silicon epitaxial planar type diode designed for use in VCOs within the UHF band. The device features a high capacitance ratio of approximately 2.8 (typical) and low series resistance.

What's inside

Maximum Ratings
Electrical Characteristics
Capacitance Ratio
Series Resistance
Product Use Restrictions
Marking

Specifications

Reverse voltage	10 V
Junction temperature	125 °C
Storage temperature range	-55~125 °C
Capacitance ratio (typ.)	2.8
Series resistance (typ.)	0.55 Ω

Frequently asked questions

What is the typical capacitance ratio of this diode?

The typical capacitance ratio is 2.8.

What is the maximum reverse voltage rating for this diode?

The maximum reverse voltage rating is 10 V.

What is the typical capacitance ratio at specified test conditions?