This document is a technical datasheet for the Toshiba 1SV308, a silicon epitaxial PIN type diode designed specifically for VHF tuner band switch applications. The device features a small package with low series resistance and small total capacitance.
The datasheet provides maximum ratings including a reverse voltage of 30V and forward current of 50mA, along with detailed electrical characteristics such as reverse current, forward voltage, and total capacitance at various test conditions.
| Reverse Voltage (VR) | 30 V |
|---|---|
| Forward Current (Ip) | 50 mA |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range (Tstg) | -65~125 °C |
| Total Capacitance (Cr) | 0.3 pF (Typ.) |
| Series Resistance (rg) | 1.10 Ω (Typ.) |
The device has a maximum reverse voltage rating of 30 V.
The typical total capacitance is 0.3 pF when tested at 1 MHz.
The maximum allowable junction temperature is 125 °C.