This document is a technical datasheet for the Toshiba 1SV303, a silicon epitaxial planar type variable capacitance diode designed for CATV tuning applications. Key features include a high capacitance ratio of approximately 17.5 and low series resistance.
The datasheet provides maximum ratings such as a reverse voltage of 30 V and a junction temperature of 125 °C. It also lists specific electrical characteristics including reverse current, capacitance values at various voltages (Co and C0), and series resistance.
| Reverse Voltage (VR) | 30 V |
|---|---|
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range (Tstg) | -55~125 °C |
| Capacitance Co (VR=2V, f=1MHz) | 42 ~ 51 pF |
| Capacitance C0 (VR=25V, f=1MHz) | 2.6 ~ 3.1 pF |
| Series Resistance (rg) | 1.05 ~ 1.25 Ω |
The maximum reverse voltage rating is 30 V.
The typical capacitance ratio is 17.5.
The series resistance is measured at a frequency of 470 MHz.