This document is a tentative datasheet for the Toshiba 1SV306K AV, a silicon epitaxial planar type variable capacitance diode designed for UHF band radio VCO applications. The device features an ultra-low series resistance of approximately 0.200 ohms and is available in a small package weighing 0.006g.
The datasheet provides maximum ratings including a reverse voltage of 15V, a junction temperature of 125°C, and a storage temperature range from -55°C to 125°C. Electrical characteristics specify capacitance values ranging from 4pF to 16pF depending on the test conditions.
| Product Type | Variable Capacitance Diode Silicon Epitaxial Planar Type |
|---|---|
| Reverse Voltage VR | 15 V |
| Junction Temperature Tj | 125 C |
| Storage Temperature Range Tstg | -55~125 °C |
| Series Resistance rg (Typ.) | 0.200 ohms |
| Weight | 0.006g |
| Capacitance C1ov (VR=2V, f=1MHz) | 4 to 16 pF |
| Capacitance Ciov (VR=10V, f=1MHz) | 5.5 to 65 pF |
The typical series resistance (rg) is 0.200 ohms.
The maximum reverse voltage (VR) rating is 15V.