Toshiba 1SV291 Variable Capacitance Diode Datasheet


Toshiba 1SV291 Variable Capacitance Diode Datasheet - cover page
Brand
Toshiba
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
1
File format
PDF
File size
71 KB
Published
07 June, 2012
Updated
07 June, 2012
MD5 checksum
65CE2C44F0E62AE1BFC4E8B14F95CC76

About this manual

This document is a datasheet for the Toshiba 1SV291, a silicon epitaxial planar type variable capacitance diode designed for UHF and SHF tuning applications. The device features a high capacitance ratio of approximately 7.6 and low series resistance, making it suitable for small size tuners.

What's inside

  • Maximum Ratings
  • Electrical Characteristics
  • Capacitance Ratio
  • Series Resistance
  • Reverse Voltage
  • Junction Temperature

Specifications

Reverse Voltage (VR)30 V
Peak Reverse Voltage (VRM)85 V
Junction Temperature (Tj)125 °C
Storage Temperature Range (Tstg)-55~125 °C
Capacitance Ratio (Coy / Cosy)7.6 (TYP.)
Series Resistance (rg)1.90 Ω (TYP.)

Frequently asked questions

What is the typical capacitance ratio of the Toshiba 1SV291?

The typical capacitance ratio (Coy / Cosy) is 7.6.

What is the maximum junction temperature for this diode?

The maximum junction temperature is 125 °C.

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