1SV325 is a silicon epitaxial planar diode from TOSHIBA for TCXO/VCO applications. This diode has a high capacitance ratio (C1 V/C4 V = 4.3) and low series resistance (rs = 0.4 Ω), making it suitable for small size tuners.
This document is a technical datasheet for the Toshiba 1SV325, a Silicon Epitaxial Planar Type diode. It provides specific electrical parameters such as reverse voltage, capacitance ratios, and series resistance under standard test conditions of 25°C.
The datasheet includes maximum operating ratings like junction temperature and storage temperature ranges. It also features graphical data illustrating the relationship between capacitance and reverse voltage at different frequencies.
| Reverse voltage (VR) | 10 V |
|---|---|
| Junction temperature (Tj) | 125 °C |
| Storage temperature range (Tstg) | -55~125 °C |
| Typical capacitance ratio (Civ/Cay) | 4.3 |
| Typical series resistance (rs) | 0.4 Ω |
The typical capacitance ratio (Civ/Cay) is 4.3.
The maximum junction temperature rating is 125 °C.