1SV331 is a variable capacitance diode produced by TOSHIBA. The product has the characteristics of small package, high capacitance ratio, low series resistance, maximum rated reverse voltage of 10V, forward leakage current of 100µA, and rated working temperature of -55~125°C
This document is a technical datasheet for the Toshiba 1SV331, a silicon epitaxial planar type variable capacitance diode. It is designed for use in Voltage Controlled Oscillators (VCO) and Temperature Compensated Crystal Oscillators (TCXO). The device features a small package with a high capacitance ratio of approximately 3.75 and low series resistance.
| Reverse voltage (VR) | 10 V |
|---|---|
| Junction temperature (Tj) | 125 °C |
| Storage temperature range (Tsig) | -55~125 °C |
| Capacitance ratio (Cry/Cay) | 3.75 (typ.) |
| Series resistance (rs) | 0.45 Q (typ.) |
The typical capacitance ratio (Cry/Cay) is 3.75.
The maximum rated reverse voltage is 10 V.