This document is a technical datasheet for the Toshiba 1SV996AY, which is identified as a Silicon Epitaxial Pin Type Diode. The device is designed for applications such as RF attenuators and RF band switches.
The datasheet provides maximum ratings including a reverse voltage of 50V and a forward current of 50mA. It also lists electrical characteristics such as typical forward voltage, reverse current, total capacitance, series resistance, junction temperature limits, and storage temperature range.
| Reverse Voltage (VR) | 50 V |
|---|---|
| Forward Current (Ir) | 50 mA |
| Junction Temperature (Tj) | 125 Cc |
| Storage Temperature Range (Tstg) | -55~125 °c |
| Forward Voltage (VP) Typ. | 0.9 V |
| Reverse Current (In) Max. | 0.1 uA |
| Total Capacitance (Ct) Typ. | 0.3 pF |
| Series Resistance (Rg) | 10 ohms |
The maximum reverse voltage rating is 50 V.
The maximum forward current is 50 mA.