Toshiba 1SV293 Variable Capacitance Diode Datasheet


Toshiba 1SV293 Variable Capacitance Diode Datasheet - cover page
Brand
Toshiba
Category
Chips
Document type
Datasheet
Language
English
Pages
1
File format
PDF
File size
67 KB
Published
07 June, 2012
Updated
07 June, 2012
MD5 checksum
09493B397DFE677927049962B1D894CA

About this manual

The document describes the Toshiba 1SV293, a silicon epitaxial planar type variable capacitance diode intended for use in VCOs within the UHF band. Key features include ultra-low series resistance (typical 0.262 ohms) and suitability for small-size sets.

The datasheet lists maximum ratings such as a reverse voltage of 10V and a junction temperature of 125°C, along with specific electrical characteristics including capacitance values at various voltages and frequencies.

What's inside

  • Maximum Ratings
  • Electrical Characteristics
  • Marking
  • Safety Precautions
  • Copyright Information

Specifications

Reverse Voltage (VR)10 V
Junction Temperature (Tj)125 °C
Storage Temperature Range (Tstg)-55~125 °C
Series Resistance (rg)0.262 ohms (Typ.)

Frequently asked questions

What is the typical series resistance of this diode?

The typical series resistance (rg) is 0.262 ohms.

Is this component suitable for UHF applications?

Yes, it is described as a VCO for the UHF band radio.

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