This document is a technical datasheet for the Toshiba 1SV307, a silicon epitaxial PIN type diode designed specifically for VHF tuner band switch applications. The device features low series resistance and small total capacitance to optimize performance in RF circuits.
The datasheet provides maximum ratings, electrical characteristics, and graphical data regarding total capacitance versus reverse voltage and series resistance versus forward current. It includes standard disclaimers regarding product reliability and intellectual property.
| Reverse Voltage (VR) | 30 V |
|---|---|
| Forward Current (Ip) | 50 mA |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range (Tstg) | -65~125 °C |
| Reverse Current (IR) | 0.1 uA |
| Forward Voltage (VE) | 0.95 | 1.0 Vv |
| Total Capacitance (Cr) | 0.3 | 0.5 pF |
The device has a maximum reverse voltage rating of 30 V.
The typical total capacitance is 0.3 pF when tested at 1 MHz.
The maximum rated junction temperature is 125 °C.