This document is a technical datasheet for the Toshiba 1SV304, a silicon epitaxial planar type variable capacitance diode designed for VHF band radio applications. The device features a high capacitance ratio of approximately 3.0 and low series resistance.
The datasheet provides maximum ratings including a reverse voltage of 10V and a junction temperature of 125°C. It also lists specific electrical characteristics such as capacitance values at various reverse voltages (17.3 pF typical at 1V) and includes graphs illustrating the relationship between capacitance, series resistance, and reverse voltage.
| Reverse Voltage (VR) | 10 V |
|---|---|
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range (Tstg) | -55~125 °C |
| Capacitance Ratio (Ciy/Cay) | 3.0 (Typ.) |
| Series Resistance (rg) | 0.27 Ω (Typ.) |
| Capacitance at 1V (Ciy) | 18.3 pF (Typ.) |
| Capacitance at 4V (Cay) | 6.1 pF (Typ.) |
The maximum reverse voltage rating is 10 V.
The typical capacitance ratio (Cyy/Cay) is 3.0.
The maximum junction temperature is 125 °C.