The document describes the Toshiba 1SV153, a silicon epitaxial planar type variable capacitance diode designed for TV tuning applications. Key features include a high capacitance ratio of approximately 6.5 (C2V/C25V) and low series resistance.
Technical specifications are provided for maximum ratings such as reverse voltage and junction temperature, alongside detailed electrical characteristics including reverse current, capacitance at different voltages, and capacitance ratio.
| Reverse Voltage | 30 V |
|---|---|
| Peak Reverse Voltage | 35 V |
| Junction Temperature | 125 °C |
| Storage Temperature Range | -55~125 °c |
| Reverse Current (Typ) | 10 nA |
| Capacitance at 2V (Typ) | 14.16 ~ 16.25 pF |
| Capacitance at 25V (Typ) | 2.1L ~ 2.43 pF |
| Capacitance Ratio (Typ) | 6.5 |
The typical capacitance ratio C2V/C25V is 6.5.
The maximum rated junction temperature is 125 °C.