TPCS8102 is a field effect transistor produced by Toshiba. It features a small footprint and low power consumption. It is suitable for applications such as lithium ion batteries, portable devices and notebooks.
This document is a technical datasheet for the Toshiba TPCS8102, an enhancement-mode Silicon P Channel MOS Type (U-MOS II) field effect transistor. The device features a small footprint due to its thin package design and is specifically targeted for lithium ion battery applications, portable equipment, and notebook PCs.
Key electrical characteristics include a maximum drain-source breakdown voltage of 70V, a typical gate threshold voltage between -0.5V and -1.2V, and low leakage current. The datasheet provides detailed specifications for DC parameters such as drain-source ON resistance (RDS(on)) and forward transfer admittance, as well as AC switching characteristics like rise time and turn-on time.
| Package Type | Silicon P Channel MOS Type (U-MOS II) |
|---|---|
| Gate threshold voltage (typical) | -0.5 ~ -1.2 V |
| Drain-source ON resistance (typical) | 16 mΩ |
| Forward transfer admittance (typical) | 17 S |
| Drain power dissipation (t=10s, Note 2a) | 15 W |
The device is designed for lithium ion battery applications, portable equipment, and notebook PCs.
Yes, the transistor is an electrostatic sensitive device that must be handled with caution.