TPCS8101 is a low-power field effect transistor from TOSHIBA. It is suitable for portable equipment applications such as notebook PCs. This tube has small package, low leakage current, high on resistance and other characteristics.
This document is a technical datasheet for the Toshiba TPCS8101, an enhancement-mode Silicon P-Channel MOS Type (U-MOS II) field effect transistor. The device features a small footprint due to its thin package design and is specifically noted for applications in lithium-ion battery systems, portable equipment, and notebook PCs.
The datasheet provides comprehensive electrical characteristics, including maximum ratings such as a drain-source voltage of -30V and a drain current of -6A. It details thermal resistance values for different mounting conditions on glass-epoxy boards, along with switching times, capacitance data, and safe operating area curves.
| Drain-source voltage (Vdss) | -30 V |
|---|---|
| Drain current (Ip) | -6 A |
| Gate threshold voltage (Vth) | -0.8 ~ -2.0 V |
| Drain-source ON resistance (Rds(on)) | 15 mQ (typ.) |
| Drain power dissipation (t=10s) | 15 W |
The document lists lithium ion battery applications, portable equipment applications, and notebook PCs as specific uses.
A typical unit weighs 0.035 g according to the specifications.