This document describes the features and characteristics of the TPCP8H01 model, including multi-chip discrete devices, built-in NPN transistors, and N-channel MOS field-effect transistors. The product features high DC current gain, low collector-emitter saturation voltage, and high-speed switching.
The Toshiba TPCP8H01 is a multi-chip discrete device designed for high-speed switching applications. It integrates a built-in Silicon NPN Epitaxial Type transistor for the main switch and a Silicon N-Channel MOS Field Effect Transistor (FET) for drive purposes.
Key specifications include a DC current gain of 250 to 400, a low collector-emitter saturation voltage of 0.18V maximum, and high-speed switching with a rise time of 25ns typical. The device is electrostatic-sensitive and requires careful handling.
| Collector-base voltage | 100 V |
|---|---|
| Collector-emitter voltage | 80 V |
| Emitter-base voltage | 6 V |
| Collector current (DC) | 5.0 A |
| Drain-Source Voltage | 20 V |
| Gate threshold voltage (Min) | 0.6 V |
| Drain-Source ON resistance (Typ) | 2.2 Ohm |
It is designed for high-speed switching applications.
Yes, it is a multi-chip discrete device with built-in NPN and MOS components.
The typical rise time is 25 ns.