The TPC6003 is a N-channel MOS type field-effect transistor with low leakage current, high on-resistance, and high conductivity, which is suitable for notebook computers and portable devices.
This document is a datasheet for the Toshiba TPC6003, an enhancement-model Silicon N Channel MOS Type transistor. It is specifically targeted at Notebook PC and Portable Equipment applications.
Key electrical characteristics include a low drain-source ON resistance of 19 mΩ (typical), high forward transfer admittance of 7 S (typical), and a gate threshold voltage ranging from 1.3 to 2.5 V. The device features a maximum drain-source voltage rating of 30 V.
| Drain-source ON resistance (typical) | 19 mΩ |
|---|---|
| Forward transfer admittance (typical) | 7 S |
| Leakage current (max) | 10 pA |
| Gate threshold voltage range | 1.3 to 2.5 V |
| Drain-source breakdown voltage (min) | 30 V |
| Channel temperature max | 150 °C |
The TPC6003 is designed for use in notebook PCs and portable equipment.
When mounted on a glass-epoxy board (b), the maximum drain power dissipation is 0.7 W.
The typical weight of the TPC6003 transistor is 0.011 g.