This document introduces the TPC6002 model of TOSHIBA field effect transistor, which is suitable for notebook PC and portable equipment applications. Its features include low drain-source ON resistance, high forward transfer admittance, and low leakage current.
This document is a technical datasheet for the Toshiba TPC6002, an enhancement-model silicon N-channel MOSFET (U-MOSII). It is specifically designed for use in notebook PCs and portable equipment. Key features include low drain-source ON resistance of 25 mΩ typical, high forward transfer admittance of 10S typical, and a maximum leakage current of 10 pA.
| Product Type | Silicon N Channel MOS Type (U-MOSII) |
|---|---|
| Drain-Source ON Resistance (Typical) | 25 mΩ |
| Forward Transfer Admittance (Typical) | 10S |
| Leakage Current (Max) | 10 pA |
| Gate Threshold Voltage Range | 1.3 to 2.5 V |
| Drain-Source Breakdown Voltage (Max) | 30 V |
| Channel Temperature (Max) | 150 °C |
The maximum channel temperature is 150 °C.