The document introduces a P-Channel Enhancement Mode Avalanche Rated Standard Power MOSFET (IXTH 16P20) from IXYS. It features an international standard package, low RDS(on), rugged polysilicon gate cell structure, and unclamped inductive switching (UIS) capability.
This document provides technical information and standard ratings for the IXYS IXTH 16P20, a P-channel enhancement mode MOSFET. The device features an international standard JEDEC TO-247 AD package with low Rds(on) achieved through HDMOS process technology.
| Drain-Source Voltage (Vdss) | -200 V |
|---|---|
| Continuous Drain Current (Id) | -16 A |
| Package Type | TO-247 AD |
| Operating Temperature Range (Tj) | -55 ... +150 °C |
You must apply a mounting torque between 1.13 and 10 Nm/b.in.
The component operates within a temperature range of -55°C to +150°C.