The IRF1010ES/L is a HEXFET® Power MOSFET rectifier offered in a surface‑mount D‑Pak package and a low‑profile through‑hole version (IRF1010EL). It features low on‑resistance, fast switching, and high avalanche capability, making it suitable for high‑current applications.
The document lists absolute maximum ratings, electrical characteristics such as breakdown voltage, drain current, on‑resistance, and thermal parameters, as well as detailed package dimensions, tape‑and‑reel information, and contact addresses for International Rectifier.
| Drain‑to‑Source Breakdown Voltage (V_DSS) | 60 V |
|---|---|
| Pulsed Drain Current (I_DM) | 330 A |
| Power Dissipation (P_D) @ 25 °C | 3.8 W |
| Gate‑to‑Source Voltage (V_GS) | +20 V |
| Junction‑to‑Case Thermal Resistance | 0.90 °C/W |
The drain‑to‑source breakdown voltage is rated at 60 V.
A soldering temperature of 300 °C for 10 seconds is recommended.