Key facts
- Model
- IRF1010E
- Category
- Other Electronics
- Documents
- 3
- Languages
- EN
- Last added
- 2012-06-04
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Manuallnternational IOR Rectifier IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF HEXFET Power MOSFET handbook
International Rectifier IRF1010E specifications
| Drain‑to‑Source Breakdown Voltage (V_DSS) | 60 V |
|---|---|
| Pulsed Drain Current (I_DM) | 330 A |
| Power Dissipation (P_D) @ 25 °C | 3.8 W |
| Gate‑to‑Source Voltage (V_GS) | +20 V |
| Junction‑to‑Case Thermal Resistance | 0.90 °C/W |
Source: International Rectifier IRF1010ES/L Rectifier Datasheet
All International Rectifier IRF1010E documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the breakdown voltage rating of the IRF1010ES/L?
The drain‑to‑source breakdown voltage is rated at 60 V.
From: International Rectifier IRF1010ES/L Rectifier Datasheet
What soldering temperature is recommended for the IRF1010ES/L?
A soldering temperature of 300 °C for 10 seconds is recommended.
From: International Rectifier IRF1010ES/L Rectifier Datasheet
What is the maximum continuous drain current at 25 °C?
The IRF1010E can conduct up to 84 A continuously at a case temperature of 25 °C.
From: International Rectifier IRF1010E Power MOSFET Datasheet
Which package type does the IRF1010E use?
It is supplied in a TO‑220AB surface‑mount package.
From: International Rectifier IRF1010E Power MOSFET Datasheet