The IRF1205 HEXFET® Power MOSFET features low on-resistance, fast switching speed, and rugged design. Suitable for a wide range of applications.
The IRF1205 is a HEXFET® Power MOSFET from International Rectifier featuring a 55 V drain‑source rating, low on‑resistance, and a TO‑220 package suitable for about 50 W power dissipation. It is designed for a wide range of commercial applications requiring fast switching and robust avalanche capability.
This datasheet lists the device's electrical parameters such as VDSS, RDS(on), continuous drain current, and thermal resistances, as well as absolute maximum ratings, package dimensions, and lead assignments. Designers can use these specifications to evaluate suitability for their circuits.
| Drain-to-Source Voltage (VDSS) | 55 V |
|---|---|
| On‑Resistance (RDS(on)) | 0.027 Ω |
| Power Dissipation (PD) @ 25 °C | 83 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 1.8 °C/W |
| Gate Threshold Voltage (VGS(th)) | 2.0‑4.0 V |
The IRF1205 is rated for a maximum drain‑to‑source voltage of 55 V.
The on‑resistance (RDS(on)) is 0.027 Ω when VGS is 10 V.