IRF1010N HEXFET® Power MOSFET is a high performance 55 V low RDS(on) MOSFET from International Rectifier with extremely low on-resistance, fast switching speed and ruggedized device design for use in a wide range of applications.
The IRF1010N is a TO‑220AB HEXFET power MOSFET offering ultra‑low on‑resistance, high current capability and robust avalanche rating. It is designed for a wide range of industrial and automotive applications and operates from –55 °C to +175 °C.
The document provides absolute maximum ratings, detailed electrical parameters, thermal characteristics, package dimensions and typical performance curves to aid designers in selecting and integrating the device.
| Drain‑to‑Source Breakdown Voltage (VDS) | 55 V |
|---|---|
| On‑Resistance (RDS(on)) | 11 mΩ |
| Power Dissipation (PD) | 180 W |
| Gate Threshold Voltage (VGS(th)) | 2.0 V – 4.0 V |
| Total Gate Charge (Qg) | 120 nC |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62 °C/W |
The on‑resistance (RDS(on)) is specified as 11 mΩ.
The drain‑to‑source breakdown voltage is rated at 55 V.