IRF1010E HEXFET® Power MOSFET is a high performance power MOSFET device from International Rectifier, which features extremely low on-resistance, high switching speed and ruggedized design.
The IRF1010E is a 60 V, ultra‑low on‑resistance HEXFET power MOSFET offered in a TO‑220AB package. It is designed for high‑efficiency, high‑current applications with fast switching and rugged avalanche capability.
The document provides absolute maximum ratings, thermal resistance data, detailed electrical characteristics, package dimensions, and test circuit examples for evaluating switching performance and avalanche energy.
| Continuous Drain Current (Id) @ 25°C | 84 A |
|---|---|
| Continuous Drain Current (Id) @ 100°C | 59 A |
| Pulsed Drain Current (Id,pulse) | 330 A |
| Power Dissipation (Pd) @ 25°C | 200 W |
| Gate‑to‑Source Threshold Voltage (Vgs(th)) | 2.0 V – 4.0 V |
| Drain‑to‑Source Breakdown Voltage (Vds) | 600 V |
| Typical On‑Resistance (Rds(on)) | 12 mΩ |
| Total Gate Charge (Qg) | 130 nC |
| Package | TO‑220AB |
The IRF1010E can conduct up to 84 A continuously at a case temperature of 25 °C.
It is supplied in a TO‑220AB surface‑mount package.
The typical drain‑to‑source on‑resistance is 12 mΩ at Vgs = 10 V and Id = 50 A.
The device can dissipate up to 200 W when mounted on a heatsink at 25 °C.