R5013ANJ is a 10V drive Nch MOSFET produced by ROHM Corporation. It has the characteristics of low on-resistance, fast switching speed, guaranteed gate-source voltage (VGSS) of ±30V, simple drive circuits and easy parallel use.
The R5013ANJ is a 10 V drive N‑channel MOSFET featuring low on‑resistance, fast switching speed, and a guaranteed gate‑source voltage of +30 V. It is designed for easy parallel use and simple circuit implementation.
Key specifications include a drain‑source voltage rating of 500 V, continuous drain current of 13 A, pulsed drain current of 52 A, total power dissipation of 100 W, and a channel‑to‑case thermal resistance of 1.25 °C/W. The device is supplied in an LPTL (TLL) package with a basic ordering unit of 1 000 pieces.
| Drain‑source voltage (VDS) | 500 V |
|---|---|
| Gate‑source voltage (VGS) | +30 V |
| Continuous drain current (ID) | 13 A |
| Pulsed drain current (ID,pulse) | 52 A |
| Channel‑to‑case thermal resistance (RθJC) | 1.25 °C/W |
| Body diode forward voltage (VF) | 1.5 V |
The device can withstand up to 500 V between drain and source.
The gate‑source voltage is guaranteed up to +30 V.
The MOSFET can conduct a continuous drain current of 13 A.
It is supplied in an LPTL (TLL) surface‑mount package.