R5011FNX is a 10V drive Nch MOSFET from ROHM. It features fast reverse recovery time, low on-resistance, fast switching speed, etc. It is suitable for switching circuits.
The R5011FNX is a 10 V drive N‑channel MOSFET offered in a TO‑220FM package. It features fast reverse recovery, low on‑resistance, and high switching speed, making it suitable for simple drive circuits and parallel use.
The datasheet provides detailed electrical characteristics, absolute maximum ratings, thermal resistance, and typical application circuits, along with measurement setups for switching, gate charge, and avalanche behavior.
| Drain‑source voltage (VDS) | 500 V |
|---|---|
| Gate‑source voltage (VGS) | +30 V |
| On‑state resistance (RDS(on)) | 0.40 Ω (typ) |
| Input capacitance (Ciss) | 950 pF |
| Output capacitance (Coss) | 580 pF |
| Total power dissipation (PD) | 50 W |
| Thermal resistance (RθJC) | 25 °C/W |
The maximum drain‑source voltage is 500 V.
The device is rated for a gate‑source voltage of +30 V.
Typical on‑state resistance is 0.40 Ω.
It can dissipate up to 50 W at a case temperature of 25 °C.