This document is a datasheet for the R5005CNJ 10V Drive Nch MOSFET produced by ROHM. This MOSFET features low on-resistance, high-speed switching, and a wide range of SOA, making it suitable for switching applications. Additionally, it has a compact size, simple drive circuits, and easy parallel use.
The R5005CNJ is a 10 V drive N‑channel MOSFET offered by ROHM. It features low on‑resistance, high‑speed switching, a wide safe operating area, and easy parallel use, making it suitable for various switching applications.
The datasheet lists absolute maximum ratings, thermal resistance, detailed electrical characteristics, and typical application circuits. It also includes measurement circuit diagrams and a notice covering usage restrictions and safety considerations.
| Drain‑source voltage (VDS) | 500 V |
|---|---|
| Gate‑source voltage (VGS) | ±30 V |
| Power dissipation (PD) | 40 W |
| Maximum junction temperature (Tj) | 150 °C |
| Thermal resistance, junction‑to‑case (θJC) | 3.125 °C·W |
| Input capacitance (Ciss) | 320 pF |
| Output capacitance (Coss) | 180 pF |
| Total gate charge (Qg) | 10.8 nC |
The device can withstand up to 500 V between drain and source.
It is rated for a maximum power dissipation of 40 W.
The maximum junction temperature is 150 °C.
The input capacitance is specified as 320 pF.