This document describes the features and characteristics of ROHM's 10V Drive Nch MOSFET ZDS020N60, including low on-resistance, high-speed switching, and wide SOA.
The ZDS020N60 is a silicon N‑channel MOSFET designed for 10 V drive applications. Key features include low on‑resistance, high‑speed switching, and a wide safe operating area.
The datasheet lists absolute maximum ratings such as 600 V drain‑source voltage and 0.63 A continuous drain current, as well as typical performance parameters like 44 mΩ on‑resistance. It also includes thermal resistance data, typical characteristic curves, and example measurement circuits. A notice section outlines usage restrictions, emphasizing that the device is not intended for radiation‑tolerant or safety‑critical applications.
| Drain‑source voltage (VDS) | 600 V |
|---|---|
| Gate‑source voltage (VGS) | +30 V |
| Continuous drain current (ID) | 0.63 A |
| Pulsed drain current (ID,pulse) | 42.5 A |
| Power dissipation (PD) | 2 W |
| Channel temperature limit (TCH) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Typical on‑resistance (RDS(on)) | 44 mΩ |
The device can withstand up to 600 V between drain and source.
Typical on‑resistance is 44 mΩ.
The MOSFET can dissipate up to 2 W under the specified conditions.
Yes, it is not intended for radiation‑tolerant or safety‑critical applications such as medical instruments or aerospace equipment.