VT6X11 is a dual transistor from ROHM, suitable for current mirror circuits
The VT6X11 is a very small dual NPN silicon epitaxial planar transistor offered by ROHM. It is designed for current‑mirror circuits and other low‑power applications, featuring a compact six‑lead package (code T2R).\n\nThe datasheet lists absolute maximum ratings such as 20 V collector‑base voltage, 200 mA collector current, and 150 mW power dissipation, as well as typical electrical parameters like a DC current gain of 120‑560 and a transition frequency of 400 MHz. Application notes and typical characteristic curves are also included.
| Collector‑base voltage (Vcbo) | 20 V |
|---|---|
| Collector‑emitter voltage (Vceo) | 20 V |
| Emitter‑base voltage (Vebo) | 5 V |
| Collector current (Ic) | 200 mA |
| Peak collector current (IcP) | 400 mA |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Transition frequency (ft) | 400 MHz |
| DC current gain (hFE) | 120‑560 |
| Collector‑emitter saturation voltage (VCE(sat)) | 0.12 V – 0.30 V |
The absolute maximum collector current is 200 mA (Ic) and the peak collector current is 400 mA (IcP).
It uses a very small six‑lead package with two transistors, identified by the ordering code T2R.
Yes, the device is listed as suitable for current‑mirror circuits in the applications section.