This document describes the features and characteristics of the ZDX130N50 N-channel MOSFET from ROHM, including low on-resistance, high-speed switching, and high package power. It is suitable for switching applications. The document also provides detailed information on the dimensions, absolute maximum ratings, and thermal resistance of this MOSFET.
The ROHM ZDX130N50 is a 10 V‑drive N‑channel MOSFET in a TO‑220FM package. The document lists its key features such as low on‑resistance, high‑speed switching, and a guaranteed +30 V gate‑source rating.
Detailed electrical specifications, absolute maximum ratings, thermal resistance, characteristic curves, and measurement circuit diagrams are provided, along with packaging details and legal notices for proper use in electronic equipment.
| Drain‑source voltage (VDS) | 500 V |
|---|---|
| Gate‑source voltage (VGS) | +30 V |
| Continuous drain current (ID) | 13 A |
| Pulsed drain current (ID,pulse) | 39 A |
| Continuous source current (IS) | 13 A |
| Avalanche current (IA) | 10 A |
| Avalanche energy (EA) | 50 mJ |
| Power dissipation (PD) | 40 W |
| Maximum junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Thermal resistance (RθJC) | 3.125 °C·W |
The device is rated for a maximum drain‑source voltage of 500 V.
It can conduct a continuous drain current of 13 A.
The gate‑source voltage is guaranteed up to +30 V.
The MOSFET can dissipate up to 40 W under the specified conditions.