This document describes the features and characteristics of the R5007ANX 10V Drive Nch MOSFET produced by ROHM Co., Ltd., including low on-resistance, fast switching speed, wide safe operating area, and guaranteed gate-source voltage range.
The ROHM R5007ANX is a 10 V drive N‑channel MOSFET offered in a TO‑220FM package. It features low on‑resistance, fast switching speed, a wide safe operating area, and a guaranteed +30 V gate‑source rating, making it suitable for simple drive circuits and parallel use.
The document provides absolute maximum ratings, detailed electrical characteristics, body‑diode data, characteristic curves, and measurement circuit diagrams. It also includes a notice on usage restrictions and contact information for ROHM support.
| Drain‑source voltage (VDS) | 500 V |
|---|---|
| Gate‑source voltage (VGS) | +30 V |
| Continuous drain current (ID) | 47 A |
| Pulsed drain current (IDp) | 28 A |
| Channel‑to‑case thermal resistance (RθJC) | 3.13 °C/W |
The R5007ANX can withstand up to 500 V drain‑source voltage.
The device is guaranteed for a gate‑source voltage of +30 V.
It can carry a continuous drain current of 47 A.