The VT6Z1 is a dual transistor power management device from ROHM. It is small in size, measuring only 1.2×1.2×0.92mm, and is suitable for switch and LED driver applications.
This datasheet describes the VT6Z1 semiconductor, a dual‑transistor power‑management device offered by ROHM. It lists key features such as a very small package and includes typical applications like switches and LED drivers.
The document contains detailed specifications, including absolute maximum ratings, electrical characteristics for both the PNP and NPN transistors, packaging information, and legal notices. It is intended for designers integrating the VT6Z1 into electronic equipment.
| Collector‑base voltage (PNP) | -20 V |
|---|---|
| Collector‑emitter voltage (PNP) | -20 V |
| Emitter‑base voltage (PNP) | 5 V |
| Maximum collector current | 200 mA |
| Total power dissipation | 150 mW |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 to +150 °C |
| DC current gain (hFE) typical | 120‑560 |
| Transition frequency (fT) typical | 350‑400 MHz |
| Output capacitance (Cob) typical | 3 pF (PNP) / 2 pF (NPN) |
The VT6Z1 can handle up to 200 mA of collector current.
The PNP transistor is rated for a collector‑base voltage of -20 V, collector‑emitter voltage of -20 V, and emitter‑base voltage of 5 V.
VT6Z1 should be stored between -55 °C and +150 °C.
The device can dissipate up to 150 mW total.