R5009ANJ is a Silicon N-channel MOSFET with a low on-resistance, fast switching speed, wide SOA (safe operating area), gate-source voltage (VGSS) guaranteed to be ±30V, simple drive circuits and easy parallel use.
The R5009ANJ is a 10 V‑drive N‑channel MOSFET with low on‑resistance, fast switching speed, and a wide safe operating area. It is designed for internal circuit switching and can be used in parallel configurations.
The datasheet lists absolute maximum ratings, detailed electrical characteristics, body‑diode behavior, and typical performance curves. It also includes packaging information and measurement circuit diagrams for switching and avalanche testing.
| Drain‑Source Voltage (VDS) max | 500 V |
|---|---|
| Gate‑Source Voltage (VGS) rating | ±30 V |
The maximum drain‑source voltage is 500 V.
The gate‑source voltage is guaranteed to be ±30 V.