This document describes the features and characteristics of ROHM's 10V Drive Nch MOSFET R5009FNX, including fast reverse recovery time, low on-resistance, and fast switching speed. The product is suitable for switching applications and has the advantages of simple drive circuits and easy parallel use.
The R5009FNX is a 10 V drive N‑channel MOSFET in a TO‑220FM package. It offers fast reverse recovery, low on‑resistance, high switching speed, and easy parallel use, making it suitable for switching inner‑circuit applications.
The datasheet lists absolute maximum ratings, electrical characteristics, thermal resistance, and typical application circuits. Key parameters such as drain‑source voltage, gate‑source voltage, on‑state resistance, and power dissipation are detailed, along with measurement circuit diagrams and a notice on usage and liability.
| Drain‑source voltage (VDS) | 500 V |
|---|---|
| Gate‑source voltage (VGS) | +30 V |
| Power dissipation (PD) at 25 °C | 50 W |
| Channel temperature (TCH) max | 150 °C |
| Input capacitance (CISS) | 630 pF |
The maximum drain‑source voltage is 500 V.
The gate‑source voltage rating is +30 V.
It can dissipate up to 50 W at a case temperature of 25 °C.