The R5013ANX is a N-channel MOSFET produced by ROHM. Its features are fast switching speed, wide safe operating area, simple drive circuit and easy parallel use. It is suitable for switching power supplies and other applications.
The R5013ANX is a silicon N‑channel MOSFET designed for 10 V drive applications. It offers low on‑resistance, fast switching speed, a wide safe operating area, and a guaranteed +30 V gate‑source rating, making it suitable for parallel use and simple drive circuits.
Key electrical characteristics include a 500 V drain‑source voltage, 13 A continuous drain current, 0.29 Ω typical on‑state resistance, and a total power dissipation of 50 W at 25 °C. Thermal resistance, gate charge, and capacitance data are provided for detailed design calculations.
| Drain‑source voltage (VDS) | 500 V |
|---|---|
| Gate‑source voltage (VGS) | +30 V |
| Continuous drain current (Id) | 13 A |
| Pulsed drain current (Id,pulse) | 452 A |
| On‑state resistance (RDS(on), typical) | 0.29 Ω |
| Total power dissipation (PD) | 50 W |
| Channel temperature (Tch) | 150 °C |
| Storage temperature range | 55 °C to +150 °C |
| Input capacitance (Ciss) | 1300 pF |
| Output capacitance (Coss) | 500 pF |
| Total gate charge (Qg) | 35 nC |
The device is rated for a maximum drain‑source voltage of 500 V.
Its typical on‑state resistance is 0.29 Ω.
The gate‑source voltage is guaranteed to be +30 V.