R6020ANZ is a N-channel MOSFET from ROHM company. It features low on-resistance, low input capacitance and high ESD, and is suitable for switching applications.
The R6020ANZ is a 10 V drive N‑channel MOSFET offered by ROHM. It features low on‑resistance, low input capacitance, and high ESD robustness, making it suitable for switching applications.
The data sheet lists detailed electrical parameters such as a 600 V drain‑source rating, 30 V gate‑source rating, 20 A continuous drain current, and 120 W power dissipation. It also includes packaging details (TO‑3PF), thermal resistance, and typical application circuits.
| Drain‑source voltage (VDS) | 600 V |
|---|---|
| Gate‑source voltage (VGS) | +30 V |
| Continuous drain current (ID) | 20 A |
| Power dissipation (PD) | 120 W |
| Typical on‑state resistance (RDS(on)) | 0.17 Ω |
| Input capacitance (CISS) | 2040 pF |
The maximum drain‑source voltage is 600 V.
The typical on‑state resistance is 0.17 Ω.
It is supplied in a TO‑3PF package.
The device can dissipate up to 120 W.