This document describes the R6046ANZ Nch MOSFET manufactured by ROHM Co. Ltd. It features low on-resistance, low input capacitance, and high ESD.
The R6046ANZ is a 10 V drive N‑channel MOSFET from ROHM, intended for switching applications. The datasheet details its structure, features such as low on‑resistance and high ESD robustness, and typical application circuits.
Key specifications include a 600 V drain‑source voltage rating, 46 A continuous drain current, 6000 pF input capacitance, and a total gate charge of 150 nC. Thermal resistance, packaging dimensions, and characteristic curves are also provided to aid circuit design.
| Drain‑source voltage (VDS) | 600 V |
|---|---|
| Gate‑source voltage (VGS) | 30 V |
| Continuous drain current (ID) | 46 A |
| Pulsed drain current (IDp) | 115 A |
| Input capacitance (Ciss) | 6000 pF |
| Output capacitance (Coss) | 3900 pF |
| Total gate charge (Qg) | 150 nC |
The maximum drain‑source voltage is 600 V.
Typical input capacitance is 6000 pF.
Continuous drain current rating is 46 A.