RAF040P01 is a low-voltage P-channel MOSFET from ROHM. It has a maximum on-resistance of only 2.4mΩ, a drain-source voltage of -12V and a gate-source voltage of 0 to -8V. This product is suitable for use in switch-mode power supplies, lighting control and motor control applications.
The RAF040P01 is a P‑channel MOSFET from ROHM designed for low‑voltage drive (1.5 V) and low on‑resistance in a compact TUMT3 surface‑mount package. The datasheet provides key electrical characteristics, absolute maximum ratings, thermal data and typical application circuits.
The document includes packaging information, measurement circuit diagrams, and a legal notice outlining usage restrictions and safety considerations for designers integrating the device into electronic equipment.
| Drain‑Source Voltage (VDS) | -12 V |
|---|---|
| Gate‑Source Voltage (VGS) | -8 V |
| Continuous Drain Current (ID) | 4 A |
| Power Dissipation (PD) | 0.8 W |
| Channel Temperature Range (TCH) | 150 °C |
The device can tolerate up to –12 V between drain and source.
The MOSFET is rated for a continuous drain current of 4 A.
It is supplied in a small surface‑mount TUMT3 package.