This document describes the features and characteristics of ROHM's R8008ANX 10V Drive Nch MOSFET, including low on-resistance, low input capacitance, and high ESD. This MOSFET is primarily used for switching applications.
The R8008ANX is a 10 V drive N‑channel MOSFET offered in a TO‑220FM package. It features low on‑resistance, low input capacitance, and robust ESD protection for the gate, drain, and source.
Typical applications include switching circuits for audio‑visual, office‑automation, communication, and consumer electronic devices. The device is supplied in bulk (500 pieces per ordering unit) and includes extensive electrical characteristic curves and measurement circuit examples.
| Drain‑source voltage (V_DSS) | 800 V |
|---|---|
| Gate‑source voltage (V_GSS) | +30 V |
| Continuous drain current (I_D) | 3 A |
| Pulsed drain current (I_Dp) | 32 A |
| Power dissipation (P_D) | 50 W |
| Typical on‑state resistance (R_DS(on)) | 0.79 Ω |
| Input capacitance (C_iss) | 1080 pF |
| Output capacitance (C_oss) | 480 pF |
| Total gate charge (Q_g) | 39 nC |
| Body diode forward voltage (V_F) | 1.5 V (8 A) |
The device is rated for a maximum drain‑source voltage of 800 V.
Its typical on‑state resistance is 0.79 Ω.
It is supplied in a TO‑220FM bulk package with a basic ordering unit of 500 pieces.
The MOSFET is intended for switching applications in audio‑visual, office‑automation, communication, and consumer electronic devices.