R6046FNZ is a N-channel MOSFET produced by ROHM. It has low on-resistance, low input capacitance and high ESD characteristics. It is suitable for switching power supplies.
The ROHM R6046FNZ is a 10 V drive N‑channel MOSFET designed for switching applications. The datasheet lists its key features such as low on‑resistance, low input capacitance and high ESD robustness, and provides typical application circuits.
Detailed sections cover packaging dimensions, absolute maximum ratings, thermal resistance, electrical characteristics, body‑diode behavior, characteristic curves and measurement circuit diagrams. Legal notices and usage guidelines are included at the end of the document.
| Drain‑source voltage (VDS) | 600 V |
|---|---|
| Gate‑source voltage (VGS) | +30 V |
| Continuous drain current (ID) | 46 A |
| Pulsed drain current (IDp) | 115 A |
| Power dissipation (PD) | 120 W |
| Channel‑to‑case thermal resistance (RθJC) | 1.04 °C/W |
| Input capacitance (Ciss) | 6100 pF |
| Output capacitance (Coss) | 3600 pF |
| Total gate charge (Qg) | 150 nC |
| Gate‑source charge (Qgs) | 40 nC |
The R6046FNZ can withstand up to 600 V between drain and source.
The device is rated for a continuous drain current of 46 A.
The typical on‑state resistance is 75 mΩ at a gate voltage of 10 V.
The input capacitance (Ciss) is specified as 6100 pF.