This document is a datasheet from ROHM Co., Ltd., providing information about the structure, dimensions, features, and applications of the R8002ANX 10V Drive Nch MOSFET.
The R8002ANX is a 10 V drive N‑channel MOSFET offered in a TO‑220FM package. It features low on‑resistance, low input capacitance, and high ESD robustness, making it suitable for switching applications.
The datasheet lists absolute maximum ratings, typical electrical parameters such as 800 V drain‑source voltage, 33 mΩ typical on‑resistance, and 210 pF input capacitance, as well as thermal resistance and measurement circuit diagrams for performance verification.
| Drain‑source voltage (VDS) | 800 V |
|---|---|
| Gate‑source voltage (VGS) | ±30 V |
| Continuous drain current (ID) | 3 A |
| Power dissipation (PD) | 35 W |
| Typical on‑state resistance (RDS(on)) | 33 mΩ |
| Input capacitance (CISS) | 210 pF |
The maximum drain‑source voltage is 800 V.
The typical on‑state resistance is 33 mΩ at ID = 1 A and VGS = 10 V.