RMW280N03 is a N-channel MOSFET produced by ROHM. Its features are high power package, high switching speed, low on-resistance and low drive voltage.
The RMW280N03 is a silicon N‑channel MOSFET offered in a high‑power PSOP8 package. It features high‑speed switching, low on‑resistance, and a low 4.5 V drive voltage, making it suitable for various switching applications.
The datasheet provides detailed electrical characteristics, absolute maximum ratings, thermal specifications, and typical performance curves, along with recommended measurement circuits and application notes.
| Package type | PSOP8 |
|---|---|
| Drain‑source voltage (VDS) | 30 V |
| Gate‑source voltage (VGS) | 420 V |
| Continuous drain current (ID) | 428 A |
| Channel temperature (TCH) | 150 °C |
The device is rated for a maximum drain‑source voltage of 30 V.
The gate‑source voltage rating is 420 V.
It is supplied in a PSOP8 (8‑lead plastic small‑outline) package.
The MOSFET can conduct a continuous drain current of 428 A.