1.5V Drive Pch MOSFET RQ1A060ZP is a low voltage drive, high power silicon P-channel MOSFET.
The ROHM RQ1A060ZP is a silicon P‑channel MOSFET in a TSMT8 package, offering low on‑resistance, high‑power capability, and a low‑voltage 1.5 V drive. The sheet lists its features, applications, packaging details, and absolute maximum ratings.
Electrical characteristics include drain‑source voltage, gate‑source voltage, current limits, power dissipation, thermal resistance, and typical characteristic curves. The document also provides usage notes, safety warnings, and contact information for further technical support.
| Drain‑source voltage (V_DSS) | -12 V |
|---|---|
| Gate‑source voltage (V_GSS) | +10 V |
| Continuous drain current (I_D) | +6 A |
| Pulsed drain current (I_D(pulse)) | +24 A |
| Continuous source current (I_S) | -1 A |
| Total power dissipation (P_D) | 1.5 W |
| Maximum junction temperature (T_J) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Thermal resistance (RθJA) | 83.3 °C/W |
The device is rated for a maximum drain‑source voltage of 12 V.
It can conduct a continuous drain current of up to 6 A.
The MOSFET’s junction temperature should not exceed 150 °C.
The thermal resistance is specified as 83.3 °C/W.