RMW150N03 is a 4.5V drive N-channel MOSFET from ROHM. It has a high power package, high switching speed and low on-resistance.
The ROHM RMW150N03 is a 4.5 V drive N‑channel MOSFET offered in a high‑power PSOP8 package. The datasheet provides detailed electrical parameters, absolute maximum ratings, and typical performance curves for design reference.
Key sections include features, application notes, packaging specifications, absolute maximum ratings, electrical characteristics, characteristic curves, forward‑transfer admittance, and measurement circuit diagrams.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) | +15 A |
| Pulsed drain current (ID,pulse) | +60 A |
| Power dissipation (PD) | 3.0 W |
| Maximum junction temperature (Tj) | 150 °C |
| Thermal resistance (RθJA) | 41.7 °C/W |
| Storage temperature range | -55 °C to +150 °C |
| Input capacitance (Ciss) | 831 pF |
| Output capacitance (Coss) | 337 pF |
| On‑resistance (RDS(on)) | 6.5 mΩ – 9.1 mΩ (typ) |
The MOSFET can withstand up to 30 V drain‑source voltage.
It is rated for a continuous drain current of +15 A.
The device is designed for a low‑voltage drive of 4.5 V.
The thermal resistance is specified as 41.7 °C/W.