RMW200N03 is a high-voltage N-channel MOSFET produced by ROHM Company. Its features are high power package, high switching speed and low on-resistance, which is suitable for switching applications.
The RMW200N03 is a silicon N‑channel MOSFET offered in a high‑power PSOP8 package. It is designed for low‑voltage (4.5 V) drive applications and features high‑speed switching with low on‑resistance.
Key data include a 30 V drain‑source rating, ±20 V gate‑source rating, 20 A continuous drain current, typical on‑resistance of 4.0 mΩ, and a thermal resistance of 41.7 °C/W. The sheet also provides typical output and transfer characteristic curves, measurement circuit diagrams, and usage notes for safe implementation.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Gate‑source voltage (VGS) | ±20 V |
| Continuous drain current (ID) | 20 A |
| On‑resistance (RDS(on), typical) | 4.0 mΩ |
| Power dissipation (PD) | 3.0 W |
| Thermal resistance, channel‑to‑ambient (RthJA) | 41.7 °C/W |
The device is rated for a maximum drain‑source voltage of 30 V.
The typical on‑resistance is 4.0 mΩ at ID = 20 A and VGS = 4.5 V.